CAV93C66VE-GT3集成电路（IC）的存储器规格书PDF中文资料

CAV93C66VE-GT3属于集成电路（IC）的存储器。由安森美半导体公司制造生产的CAV93C66VE-GT3存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

Description

The CAV93C66 is an EEPROM Serial 4−Kb Microwire

Automotive Grade 1 device which is organized as either 256 registers

of 16 bits (ORG pin at VCC) or 512 registers of 8 bits (ORG pin at

GND). Each register can be written (or read) serially by using the DI

(or DO) pin. The device features sequential read and self−timed

internal write with auto−clear. On−chip Power−On Reset circuitry

protects the internal logic against powering up in the wrong state.

Features

• Automotive AEC−Q100 Grade 1 (−40°C to +125°C) Qualified

• High Speed Operation: 2 MHz

• 2.5 V to 5.5 V Supply Voltage Range

• Selectable x8 or x16 Memory Organization

• Self−timed Write Cycle with Auto−clear

• Sequential Read

• Software Write Protection

• Power−up Inadvertent Write Protection

• Low Power CMOS Technology

• 1,000,000 Program/Erase Cycles

• 100 Year Data Retention

• 8−lead SOIC and TSSOP Packages

• These Devices are Pb−Free, Halogen Free/BFR Free, and RoHS Compliant