CAV24C02WE-GT3集成电路（IC）的存储器规格书PDF中文资料

CAV24C02WE-GT3属于集成电路（IC）的存储器。由安森美半导体公司制造生产的CAV24C02WE-GT3存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

描述 Description

The CAV24C02/04/08/16 are 2−Kb, 4−Kb, 8−Kb and 16−Kb respectively CMOS Serial EEPROM devices organized internally as 8/16/32/64 and 128 pages respectively of 16 bytes each. All devices support both the Standard (100 kHz) as well as Fast (400 kHz) I2C protocol.

Data is written by providing a starting address, then loading 1 to 16 contiguous bytes into a Page Write Buffer, and then writing all data to non−volatile memory in one internal write cycle. Data is read by providing a starting address and then shifting out data serially while automatically incrementing the internal address count.

External address pins make it possible to address up to eight CAV24C02, four CAV24C04, two CAV24C08 and one CAV24C16 device on the same bus.

特性 Features

• Automotive Temperature Grade 1 (−40°C to +125°C)

• Supports Standard and Fast I2C Protocol

• 2.5 V to 5.5 V Supply Voltage Range

• 16−Byte Page Write Buffer

• Hardware Write Protection for Entire Memory

• CAV Prefix for Automotive and Other Applications Requiring Site and Change Control

• Schmitt Triggers and Noise Suppression Filters on I2C Bus Inputs (SCL and SDA)

• Low power CMOS Technology

• 1,000,000 Program/Erase Cycles

• 100 Year Data Retention

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant