CAT93C76VI-GT3集成电路（IC）的存储器规格书PDF中文资料

CAT93C76VI-GT3属于集成电路（IC）的存储器。由安森美半导体公司制造生产的CAT93C76VI-GT3存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

Description

The CAT93C76 is an 8−Kb Serial EEPROM memory device which is configured as either registers of 16 bits (ORG pin at VCC or Not Connected) or 8 bits (ORG pin at GND). Each register can be written (or read) serially by using the DI (or DO) pin. The CAT93C76 is manufactured using ON Semiconductor’s advanced CMOS EEPROM floating gate technology. The device is designed to endure 1,000,000 program/erase cycles and has a data retention of 100 years. The device is available in 8−pin PDIP, SOIC, TSSOP and 8−pad TDFN packages.

Features

• High Speed Operation: 3 MHz @ VCC ≥ 2.5 V

• Low Power CMOS Technology

• 1.8 to 5.5 Volt Operation

• Selectable x8 or x16 Memory Organization

• Self−timed Write Cycle with Auto−clear

• Software Write Protection

• Power−up Inadvertant Write Protection

• 1,000,000 Program/Erase Cycles

• 100 Year Data Retention

• Industrial and Extended Temperature Ranges

• Sequential Read

• “Green” Package Option Available

• This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant