CAT93C66VI-GT3集成电路（IC）的存储器规格书PDF中文资料

CAT93C66VI-GT3属于集成电路（IC）的存储器。由安森美半导体公司制造生产的CAT93C66VI-GT3存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

Description

The CAT93C66 is a 4 kb CMOS Serial EEPROM device which is organized as either 256 registers of 16 bits (ORG pin at VCC) or 512 registers of 8 bits (ORG pin at GND). The CAT93W66 features x16 memory organization only. Each register can be written (or read) serially by using the DI (or DO) pin. The device features sequential read and self−timed internal write with auto−clear. On−chip Power−On Reset circuitry protects the internal logic against powering up in the wrong state.

Features

•High Speed Operation: 4 MHz (5 V), 2 MHz (1.8 V)

•1.8 V to 5.5 V Supply Voltage Range

•Selectable x8 or x16 Memory Organization: CAT93C66

•Self−timed Write Cycle with Auto−clear

•Sequential Read

•Software Write Protection

•Power−up Inadvertent Write Protection

•Low Power CMOS Technology

•1,000,000 Program/Erase Cycles

•100 Year Data Retention

•Industrial and Extended Temperature Ranges

•8−lead PDIP, SOIC, TSSOP, 6−lead SOT−23, 8−pad TDFN and UDFN Packages

•These Devices are Pb−Free, Halogen Free/BFR Free, and RoHS Compliant