DESCRIPTION

The CAT28F512 is a high speed 64K x 8-bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after-sale code updates. Electrical erasure of the full memory contents is achieved typically within 0.5 second.

It is pin and Read timing compatible with standard EPROM and EEPROM devices. Programming and Erase are performed through an operation and verify algorithm. The instructions are input via the I/O bus, using a

two write cycle scheme. Address and Data are latched to free the I/O bus and address bus during the write operation.

The CAT28F512 is manufactured using Catalyst’s advanced CMOS floating gate technology. It is designed to endure 100,000 program/erase cycles and has a data retention of 10 years. The device is available in JEDEC approved 32-pin plastic DIP, 32-pin PLCC or 32-pin TSOP packages.

FEATURES

■ Fast Read Access Time: 90/120/150 ns

■ Low Power CMOS Dissipation:

–Active: 30 mA max (CMOS/TTL levels)

–Standby: 1 mA max (TTL levels)

–Standby: 100 µA max (CMOS levels)

■ High Speed Programming:

–10 µs per byte

–1 Sec Typ Chip Program

■ 12.0V ± 5 Programming and Erase Voltage

■ Electronic Signature

■ Commercial, Industrial and Automotive Temperature Ranges

■ Stop Timer for Program/Erase

■ On-Chip Address and Data Latches

■ JEDEC Standard Pinouts:

–32-pin DIP

–32-pin PLCC

–32-pin TSOP ( 8 x 20)

■ 100,000 Program/Erase Cycles

■ 10 Year Data Retention

■ Green Package Options Available

CAT28F512LI90属于集成电路（IC） > 存储器。安森美半导体公司制造生产的CAT28F512LI90存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。