DESCRIPTION

The CAT28F001 is a high speed 128K X 8 bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after sale code updates. The CAT28F001 has a blocked architecture with one 8 KB Boot Block, two 4 KB Parameter Blocks and one 112 KB Main Block. The Boot Block section can be at the top or bottom of the memory map and includes a reprogramming write lock out feature to guarantee data integrity. It is designed to contain secure code which will bring up the system minimally and download code to other loca

tions of CAT28F001.

FEATURES

■Fast Read Access Time: 90/120 ns

■On-Chip Address and Data Latches

■Blocked Architecture

— One 8 KB Boot Block w/ Lock Out

• Top or Bottom Locations

— Two 4 KB Parameter Blocks

— One 112 KB Main Block

■Low Power CMOS Operation

■12.0V ±5 Programming and Erase Voltage

■Automated Program & Erase Algorithms

■High Speed Programming

■Commercial, Industrial and Automotive Temperature Ranges

CAT28F001G-12TT属于集成电路（IC） > 存储器。安森美半导体公司制造生产的CAT28F001G-12TT存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。