CAT25160VE-GT3集成电路（IC）的存储器规格书PDF中文资料

CAT25160VE-GT3属于集成电路（IC）的存储器。由安森美半导体制造生产的CAT25160VE-GT3存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

描述 Description

The CAT25080/25160 are 8−Kb/16−Kb Serial CMOS EEPROM devices internally organized as 1024x8/2048x8 bits. They feature a 32−byte page write buffer and support the Serial Peripheral Interface (SPI) protocol. The device is enabled through a Chip Select (CS) input. In addition, the required bus signals are a clock input (SCK), data input (SI) and data output (SO) lines. The HOLD input may be used to pause any serial communication with the CAT25080/25160 device. These devices feature software and hardware write protection, including partial as well as full array protection.

特性 Features

• 20 MHz SPI (5 V) Compatible

• 1.8 V to 5.5 V Supply Voltage Range

• SPI Modes (0,0) & (1,1)

• 32−byte Page Write Buffer

• Self−timed Write Cycle

• Hardware and Software Protection

• Block Write Protection

− Protect 1/4, 1/2 or Entire EEPROM Array

• Low Power CMOS Technology

• 1,000,000 Program/Erase Cycles

• 100 Year Data Retention

• Industrial and Extended Temperature Range

• 8−lead PDIP, SOIC, TSSOP and 8−pad TDFN, UDFN Packages

• These Devices are Pb−Free, Halogen Free/BFR Free, and RoHS Compliant