1200 V, 110 A, Silicon Carbide, Half-Bridge Module

Technical Features • Industry Standard 62 mm Footprint • Ultra Low Loss, High-Frequency Operation • Zero Reverse Recovery from Diodes • Zero Turn-off Tail Current from MOSFET • Normally-off, Fail-safe Device Operation • Copper Baseplate and Aluminum Nitride Insulator Typical Applications

文件：3.08811 Mbytes 页数：12 Pages

WOLFSPEED

栅极驱动板

1200 V, 12.5 mΩ, BM2, Half-Bridge, Industrial qualified, SiC Power Module • Industry-Leading; Reliable Silicon Carbide MOSFET Technology in Robust; Well-Established 62mm Form Factor\n• Strong Thermal Performance + Material Selections Optimized for Industrial & Harsh Environment Applications\n• Low-Inductance Design (10 – 15 nH) for Fast Switching with Low Power Losses\n• ;

Wolfspeed(CREE)

All-SiC Power MODULE

FEATURES ·VDS=1200V,RDS(on)= 16mΩ（max） ·Zero Reverse Recovery Current from Diode ·Zero Turn-Off Tail Current from MOSFET ·High-Frequency Operation ·Ease of Paralleling ·Ultra Low Loss APPLICATIONS ·Induction Heating ·Solar and Wind Inverters ·DC/AC Converters

文件：855.85 Kbytes 页数：11 Pages

ISC

无锡固电

传感器

LEM/莱姆

上传：天津市博通航睿技术有限公司

传感器

LEM

莱姆

上传：深圳市鹏华威电子有限公司