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GAL22V10D-7LP	文件：386.45 Kbytes Page：29 Pages	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司	Lattice
GAL22V10D-7LP	文件：718.73 Kbytes Page：23 Pages	GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司	Lattice
GAL22V10D-7LP	文件：718.73 Kbytes Page：23 Pages	AllDevicesDiscontinued	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司	Lattice
GAL22V10D-7LPI	文件：718.73 Kbytes Page：23 Pages	ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司	Lattice
GAL22V10D-7LPI	文件：718.73 Kbytes Page：23 Pages	AllDevicesDiscontinued	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司	Lattice
GAL22V10D-7LPI	文件：718.73 Kbytes Page：23 Pages	GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司	Lattice
GAL22V10D-7LPI	文件：386.45 Kbytes Page：29 Pages	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司	Lattice
GAL22V10D-7LPI	文件：718.73 Kbytes Page：23 Pages	AllDevicesDiscontinued	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司	Lattice
GAL22V10D-7LPN	文件：718.73 Kbytes Page：23 Pages	AllDevicesDiscontinued	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司	Lattice
GAL22V10D-7LPN	文件：718.73 Kbytes Page：23 Pages	GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司	Lattice

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