CA3127E中文资料INTERSIL数据手册PDF规格书

描述 Description

The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the terminals for the individual transistors and a separate substrate connection has been provided for maximum application flexibility. The monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors.

特性 Features

• Gain Bandwidth Product (fT). . . . . . . . . . . . . . . . >1GHz

• Power Gain . . . . . . . . . . . . . . . . . 30dB (Typ) at 100MHz

• Noise Figure . . . . . . . . . . . . . . . . 3.5dB (Typ) at 100MHz

• Five Independent Transistors on a Common Substrate

Applications

• VHF Amplifiers

• Multifunction Combinations - RF/Mixer/Oscillator

• Sense Amplifiers

• Synchronous Detectors

• VHF Mixers

• IF Converter

• IF Amplifiers

• Synthesizers

• Cascade Amplifiers