General Purpose High Current NPN Transistor Arrays

CA3081 and CA3082 consist of seven high current (to 100mA) silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter configuration and the CA3082 is connected in a common collector configuration. Features • CA3081 - Common Emitter Array • CA3082 - Com

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HIGH CURRENT NPN TRANSISTOR for general purpose applications BJT Array

HIGH CURRENT NPN TRANSISTOR for general purpose applications The CA3081 and CA3082 consist of seven high current (to 100mA) silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common collector confguration. The CA3081 and CA3082 are capable of directly driving

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罗切斯特

General Purpose High Current NPN Transistor Arrays

CA3081 and CA3082 consist of seven high current (to 100mA) silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter configuration and the CA3082 is connected in a common collector configuration. Features • CA3081 - Common Emitter Array • CA3082 - Com

文件：66.12 Kbytes 页数：6 Pages

INTERSIL

HIGH CURRENT NPN TRANSISTOR for general purpose applications BJT Array

HIGH CURRENT NPN TRANSISTOR for general purpose applications The CA3081 and CA3082 consist of seven high current (to 100mA) silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common collector confguration. The CA3081 and CA3082 are capable of directly driving

文件：607.29 Kbytes 页数：1 Pages

ROCHESTER

罗切斯特

HIGH CURRENT NPN TRANSISTOR for general purpose applications BJT Array

HIGH CURRENT NPN TRANSISTOR for general purpose applications The CA3081 and CA3082 consist of seven high current (to 100mA) silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common collector confguration. The CA3081 and CA3082 are capable of directly driving

文件：607.29 Kbytes 页数：1 Pages

ROCHESTER

罗切斯特

General Purpose High Current NPN Transistor Arrays

CA3081 and CA3082 consist of seven high current (to 100mA) silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter configuration and the CA3082 is connected in a common collector configuration. Features • CA3081 - Common Emitter Array • CA3082 - Com

文件：66.12 Kbytes 页数：6 Pages

INTERSIL

General Purpose High Current NPN Transistor Arrays

CA3081 and CA3082 consist of seven high current (to 100mA) silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter configuration and the CA3082 is connected in a common collector configuration. Features • CA3081 - Common Emitter Array • CA3082 - Com

文件：66.12 Kbytes 页数：6 Pages

INTERSIL

HIGH CURRENT NPN TRANSISTOR for general purpose applications BJT Array

HIGH CURRENT NPN TRANSISTOR for general purpose applications The CA3081 and CA3082 consist of seven high current (to 100mA) silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common collector confguration. The CA3081 and CA3082 are capable of directly driving

文件：607.29 Kbytes 页数：1 Pages

ROCHESTER

罗切斯特

HIGH CURRENT NPN TRANSISTOR for general purpose applications BJT Array

HIGH CURRENT NPN TRANSISTOR for general purpose applications The CA3081 and CA3082 consist of seven high current (to 100mA) silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common collector confguration. The CA3081 and CA3082 are capable of directly driving

文件：607.29 Kbytes 页数：1 Pages

ROCHESTER

罗切斯特

HIGH CURRENT NPN TRANSISTOR for general purpose applications BJT Array

HIGH CURRENT NPN TRANSISTOR for general purpose applications The CA3081 and CA3082 consist of seven high current (to 100mA) silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common collector confguration. The CA3081 and CA3082 are capable of directly driving

文件：607.29 Kbytes 页数：1 Pages

ROCHESTER

罗切斯特