首页 >C945-GR(CU)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
GENERALPURPOSETRANSISTORNPN200mW150mA50V DESCRIPTION The C945isavailableinSOT23package FEATURES PowerDissipation PCM:0.2W(Tamb=25°C) CollectorCurrent ICM:0.15A Collector-BaseVoltage V(BR)CBO:60V OperatingandStorageJunctionTemperatureRange TJ,TSTG:-55°Cto+150°C AvailableinSOT23packag | AITSEMIAiT Semiconductor Inc. 创瑞科技AiT创瑞科技 | AITSEMI | ||
GENERALPURPOSETRANSISTORNPN200mW150mA50V DESCRIPTION The C945isavailableinSOT23package FEATURES PowerDissipation PCM:0.2W(Tamb=25°C) CollectorCurrent ICM:0.15A Collector-BaseVoltage V(BR)CBO:60V OperatingandStorageJunctionTemperatureRange TJ,TSTG:-55°Cto+150°C AvailableinSOT23packag | AITSEMIAiT Semiconductor Inc. 创瑞科技AiT创瑞科技 | AITSEMI | ||
GENERALPURPOSETRANSISTORNPN200mW150mA50V DESCRIPTION The C945isavailableinSOT23package FEATURES PowerDissipation PCM:0.2W(Tamb=25°C) CollectorCurrent ICM:0.15A Collector-BaseVoltage V(BR)CBO:60V OperatingandStorageJunctionTemperatureRange TJ,TSTG:-55°Cto+150°C AvailableinSOT23packag | AITSEMIAiT Semiconductor Inc. 创瑞科技AiT创瑞科技 | AITSEMI | ||
GENERALPURPOSETRANSISTORNPN200mW150mA50V DESCRIPTION The C945isavailableinSOT23package FEATURES PowerDissipation PCM:0.2W(Tamb=25°C) CollectorCurrent ICM:0.15A Collector-BaseVoltage V(BR)CBO:60V OperatingandStorageJunctionTemperatureRange TJ,TSTG:-55°Cto+150°C AvailableinSOT23packag | AITSEMIAiT Semiconductor Inc. 创瑞科技AiT创瑞科技 | AITSEMI | ||
NPNSiliconPlanarEpitaxialTransistor NPNSILICONPLANAREPITAXIALTRANSISTOR 2SC945ISANNPNSILICONPLANAREPITAXIALTRANSISTORDESIGNEDFORAUDIOFREQUENCYAMPLIFIER.ITISCOMPLEMENTARYTOTHEPNPTYPE2SA733. | MICRO-ELECTRONICS Micro Electronics | MICRO-ELECTRONICS | ||
NPNgeneralpurposetransistor DESCRIPTION NPNtransistorinaTO-92(SOT54)plasticpackage.PNPcomplement:2PA733. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.50V). APPLICATIONS •Generalpurposeswitchingandamplification. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
HighVoltage DESCRIPTION ·HighVoltage ·ExcellenthFElinearity APPLICATIONS ·DsignedforuseindriverstageofAFamplifierandlowspeedswitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR Description DesignedforuseindriverstageofAFamplifierapplications | DCCOM Dc Components | DCCOM | ||
EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE,SWITCHING) GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •ExcellenthFELinearity. :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) •LowNoise:NF=1dB(Typ.).atf=1kHz •ComplementarytoKTA733. | KECKEC CORPORATION KEC株式会社 | KEC | ||
NPNSiliconTransistor(AFamplifierandlowspeedswitching) DESCRIPTION The2SC945isdesignedforuseindriverstageofAFamplifierandlowspeedswitching. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC |
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