包装：散装 描述：710 C/PCOMPLETE KIT W/O CASE

HIRSCHMANN

包装：散装 描述：710 C/PCOMPLETE KIT W/O CASE

HIRSCHMANN

包装：散装 描述：C/P W/MAINT. KIT

HIRSCHMANN

PNP SILICON POWER DARLINGTON TRANSISTOR

FEATURES * 625mW POWER DISSIPATION * Very High hFE at High Current (5A) * Extremely Low VCE(sat) at High Current (1A)

文件：74.67 Kbytes 页数：3 Pages

ZETEX

10500 X 3 pixel CCD Linear Sensor (Color)

文件：152.98 Kbytes 页数：12 Pages

SONYSony Corporation

索尼

Power MOSFET(Vdss=450V, Rds(on)=1.2ohm, Id=3.4A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industri

文件：241.41 Kbytes 页数：8 Pages

IRF