C6D20065D中文资料650 V Discrete Silicon Carbide Schottky Diodes数据手册Wolfspeed(CREE)规格书

描述 Description

650 V, 20 A, TO-247-3 package, Industrial qualified, Discrete SiC Schottky Diode

特性 Features

• Lowest forward voltage (Vf) drop over temperature in the industry
• Zero reverse-recovery charge (Qrr) for ultra-fast switching operations
• Robust MPS technology with high surge capability
• High reverse-voltage blocking capability
• Direct drop-in replacement for current silicon diodes and other silicon carbide diodes

应用 Application

• Industrial Power Supplies
• Server/Telecom
• EV-Charging Systems
• Energy Storage Systems (ESS)
• Uninterruptible Power Supplies (UPS)
• Battery Management Systems (BMS)

简介

C6D20065D属于分立半导体产品的二极管-整流器-阵列。由制造生产的C6D20065D二极管 - 整流器 - 阵列二极管和整流器阵列系列中的产品可在单个封装内包含两个或多个分立二极管。其特征表述类似于单个分立二极管，并增加了“二极管配置”属性，该属性指示设备中二极管之间任何内部连接的存在情况和特性。请注意，具有全桥配置的阵列被专门排除在外，并列为单独的产品系列。