N-channel 20V - 0.030ohm - 5A - TSSOP8 2.7V-drive STripFET TM ll Power MOSFET

General features ■ Ultra low threshold gate drive (2.7V) ■ Standard outline for easy automated surface mount assembly Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely hi

文件：266.33 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：C5NF20V；Package：TSSOP8；N-channel 20V - 0.030ohm - 5A - TSSOP8 2.7V-drive STripFET TM ll Power MOSFET

General features ■ Ultra low threshold gate drive (2.7V) ■ Standard outline for easy automated surface mount assembly Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely hi

文件：266.33 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 20V - 0.030ohm - 5A - TSSOP8 2.7V-drive STripFET TM ll Power MOSFET

ST

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Dual N-Channel 25-V (D-S) MOSFET

文件：965.66 Kbytes 页数：8 Pages

VBSEMI

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N-channel 20V - 0.030ohm - 5A - TSSOP8 2.7V-drive STripFET TM ll Power MOSFET

General features ■ Ultra low threshold gate drive (2.7V) ■ Standard outline for easy automated surface mount assembly Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely hi

文件：266.33 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 20V - 0.030ohm - 5A TSSOP8 2.7V-DRIVE STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：270.94 Kbytes 页数：8 Pages

STMICROELECTRONICS

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