Silicon NPN Epitaxial

• High breakdown voltage\n• V(BR)CEO = 2000 V minApplication\nHigh voltage amplifier;

Renesas

瑞萨

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • High speed ;high speed • Low saturation voltage • Bult-in damper diode APPLICATIONS • Horizontal deflection output for high resolution display,colorTV • High speed switching applications

文件：137.52 Kbytes 页数：4 Pages

ISC

无锡固电

SUPER LOW NOISE InGaAs HEMT

DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series

文件：19.34 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

MOSFET N-Ch, Enhancement Mode High Speed Switch

MOSFET N–Ch, Enhancement Mode High Speed Switch

文件：22.86 Kbytes 页数：2 Pages

NTE

NPN BISS transistor

DESCRIPTION NPN BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. PNP complement: PMMT591A. FEATURES • High current (max. 1 A) • Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS • Battery powered units where high current and lo

文件：42.57 Kbytes 页数：8 Pages

PHI

PHI