Silicon NPN Epitaxial

• High breakdown voltage\n• V(BR)CEO = 2000 V minApplication\nHigh voltage amplifier;

Renesas

瑞萨

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • High speed ;high speed • Low saturation voltage • Bult-in damper diode APPLICATIONS • Horizontal deflection output for high resolution display,colorTV • High speed switching applications

文件：137.52 Kbytes 页数：4 Pages

ISC

无锡固电

SERVICE MANUAL

文件：713.95 Kbytes 页数：16 Pages

SONYSony Corporation

索尼

SCHOTTKY BARRIER DIODE

文件：62.8 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SCHOTTKY BARRIER DIODE VOLTAGE 25 Volts CURRENT 1 Ampere

FEATURE * Small surface mounting dual element linear type. (SOT-23) * Ultra low VF. (Vf=0.40V typ. at 1A) * IF=1.0A guaranteed despite size APPLICATION * Low power recification for switching power supply

文件：384.43 Kbytes 页数：2 Pages

CHENMKO

力勤