C451T1

Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts

Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability

C451T2

Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts

Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability

CET451AN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●30V,7.2A,RDS(ON)=35mW@VGS=10V.RDS(ON)=50mW@VGS=4.5V. ●HighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-223Package.

CH451

DigitalDriveandKeyboardControlledChip

CH451FPT

SCHOTTKYBARRIERDIODEVOLTAGE40VoltsCURRENT0.1Ampere

VOLTAGE40VoltsCURRENT0.1Ampere FEATURE *Smallsurfacemountingtype.(SC-70/SOT-323) *LowVF.(VF=0.45VTyp.at100mA) *Highreliability APPLICATION *Lowpowerrectification

CH451L

DigitalDriveandKeyboardControlledChip

CH451S

DigitalDriveandKeyboardControlledChip

CHM451ANZPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT7.2Ampere FEATURE *Smallflatpackage.(SC-73/SOT-223) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CL-451

ULTRASMALLCHIPLEDSFORUSEINVARIOUSELECTRONICPRODUCTS

CL-451

Multi-ColorUpward-LightingType

Featuringworld-classproductvariationsandeaseofSMDassembly. Ultra-smallChip-LEDsforuseinvariouselectronicproducts. Asinformationdevicesbecomeevermorecompactandsophisticated,thedemandforchiptypeLEDshasaccelerateddrastically.Citizenhasthisfieldcoveredaswe