Hybrid emitter switched bipolar transistor ESBT 900V - 20A - 0.06 ohm

Description The STC20DE90HP is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC20DE90HP is designed for use in power supply forward converter and three-phase power factor

文件：281.84 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

Hybrid emitter switched bipolar transistor ESBT 900V - 20A - 0.06 ohm

Description The STC20DE90HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC20DE90HV is designed for use in power supply forward converter and three-phase power factor

文件：255.33 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

INSULATOR MATERIAL: SEEPART NUMBER CODING

文件：570.36 Kbytes 页数：3 Pages

SILABS

芯科科技

BOARD INSERTION FORCE: 16 OZ MAX PER CONTACT PAIR WHEN USING A .062 TEST BLADE

文件：265.83 Kbytes 页数：3 Pages

SILABS

芯科科技

PLATING: SEE PART NUMBER CODING OPERTING

文件：107.5 Kbytes 页数：3 Pages

SILABS

芯科科技

Hybrid emitter switched bipolar transistor ESBT 900V - 20A - 0.06 ohm

ST

意法半导体