丝印：C186；Package：SOT353；SINGLE 2-INPUT EXCLUSIVE-OR GATE

Features » Operate from 1.65V to 5.5V « Inputs accept voltages to 5.5V o lor supports partial-power-down mode « Low power dissipation » ESD Protection Exceeds JESD 22 -2000-V Human-Body Model (A114-A) -1000-V Charged-Device Model (C101)

文件：3.66228 Mbytes 页数：7 Pages

TECHPUBLIC

台舟电子

16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS

INTRODUCTION Unless specifically noted, all references to the 80C186EA apply to the 80C188EA, 80L186EA, and 80L188EA. References to pins that differ between the 80C186EA/80L186EA and the 80C188EA/ 80L188EA are given in parentheses. The ‘‘L’’ in the part number denotes low voltage operation. Physi

文件：709.65 Kbytes 页数：50 Pages

INTEL

英特尔

16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS

Intel

英特尔

Silicon Complementary Transistors General Purpose Output & Driver for Audio Amplifier

Description: The NTE186 (NPN) and NTE187 (PNP) are silicon complementary transistors in a TO202 type case designed for use as output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz, series, shunt, and switching regulators, low and high frequency inverters/c

文件：20.75 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors Medium Power Audio Amplifier

Features: • 5W Output in Complementary Pair

文件：21.02 Kbytes 页数：2 Pages

NTE

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

文件：55.13 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体