Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12OHM

Description The STC05IE150HP is manufactured in Monolithic ESBT Technology, aimed to provide best performance in high frequency / high voltage applications. it is designed for use in Gate Driven based topologies. Features ■ High voltage / high current Cascode configuration ■ Low equivalent on

文件：145.31 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12OHM

ST

意法半导体

Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12 ohm

Description The STC05IE150HV is manufactured in Monolithic ESBT Technology, aimed to provide best performance in high frequency / high voltage applications. it is designed for use in Gate Driven based topologies. Features ■ High voltage / high current Cascode configuration ■ Low equi

文件：118.97 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12OHM

Description The STC05IE150HP is manufactured in Monolithic ESBT Technology, aimed to provide best performance in high frequency / high voltage applications. it is designed for use in Gate Driven based topologies. Features ■ High voltage / high current Cascode configuration ■ Low equivalent on

文件：145.31 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12 ohm

Description The STC05IE150HV is manufactured in Monolithic ESBT Technology, aimed to provide best performance in high frequency / high voltage applications. it is designed for use in Gate Driven based topologies. Features ■ High voltage / high current Cascode configuration ■ Low equi

文件：118.97 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体