Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17?

文件：255.74 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17Ω

ST

意法半导体

Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17OHM

Description The STC04IE170HP is manufactured in Monolithic ESBT technology, aimed to provide the best performance in High Frequency / High voltage applications. It is designed for use in Gate Driven based topologies. General features ■ High voltage / high current cascode configuration

文件：282.73 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17?

文件：255.74 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

Emitter switched bipolar transistor ESBT짰 1700V - 4A - 0.17 W

Description The STC04IE170HV is manufactured in Monolithic ESBT technology, aimed to provide the best performance in High Frequency / High voltage applications. It is designed for use in Gate Driven based topologies. General features ■ High voltage / high current cascode configuration ■ Low eq

文件：469.86 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体