BZX384B3V6-E3-08分立半导体产品的二极管-齐纳-单规格书PDF中文资料

特性 Features

• 600 V, 650 V, 900 V, and 1200 V IGBTs, SiC and Si MOSFETs

• 40 V absolute maximum output supply voltage

• ±3 A, ±6 A, and ±9 A typical sinking and sourcing peak output current

• Separate source and sink outputs for hard switching and with active Miller clamp/clamp driver

• Adjustment pins for parameter configuration from input side

• Precise VCEsat detection (DESAT) with fault output and adjustable filter time and leading edge blanking time

with resistor at ADJB pin

• Adjustable IGBT soft turn-off after desaturation detection with resistor at ADJA pin

• Operation at high ambient temperature up to 125 °C with over-temperature shut down at 160 °C (±10 °C)

• Tight IC-to-IC propagation delay matching (tPDD,max = 30 ns)

• Undervoltage lockout protection with hysteresis for input and output side with active shut-down

• High common-mode transient immunity CMTI = 200 kV/μs

• Small space-saving DSO-16 fine-pitch package with large creepage distance (>8 mm)

• Safety certification

- UL 1577 recognized (planned) with VISO,test = 6840 V (rms) for 1 s, VISO = 5700 V (rms) for 60 s

- IEC 60747-17/VDE 0884-11 approval (planned) with VIORM = 1.4 kV (peak, reinforced)

• Evaluation board available EVAL-1ED3491MX12M

Potential applications

• Industrial motor drives - compact, standard, premium, servo drives

• Solar inverters

• UPS systems

• Welding

• Commercial and agricultural vehicles (CAV)

• Commercial air-conditioning (CAC)

• High-voltage isolated DC-DC converters

• Isolated switch mode power supplies (SMPS)