Unidirectional and bidirectional Transient Voltage Suppressor Diodes

文件：143.61 Kbytes 页数：3 Pages

DIOTEC

德欧泰克

Transient Voltage Suppressor Diodes

文件：152.19 Kbytes 页数：3 Pages

DIOTEC

德欧泰克

Unidirectional and bidirectional Transient Voltage Suppressor Diodes

文件：106.41 Kbytes 页数：3 Pages

DIOTEC

德欧泰克

Unidirectional and bidirectional Transient Voltage Suppressor diodes

文件：155.09 Kbytes 页数：3 Pages

SEMIKRON

赛米控丹佛斯

600 Watts Axial Leaded Transient Voltage Suppressors

文件：1.03256 Mbytes 页数：3 Pages

SUNMATE

森美特

600 W、5.8 V TVS，DO-15封装

The BZW06 TVS series is designed to protect sensitive equipment against electrostatic discharges according to IEC 61000-4-2, MIL STD 883 Method 3015, and electrical overstress such as IEC 61000-4-4 and 5. They are used for surges below 600 W 10/1000 μs.\n\n This planar technology makes it compatible • Peak pulse power: \n •600 W (10/1000 μs) \n •up to 4 kW (8/20 μs) \n• Stand-off voltage range from 5.8 V to 376 V \n• Unidirectional and bidirectional types \n• Operating Tj max: 175 °C \n• High power capability at Tj max.: up to 420 W (10/1000 µs) \n• Lead finishing: matte tin plating;

ST

意法半导体

Package：DO-204AC，DO-15，轴向；包装：卷带（TR）剪切带（CT） 类别：电路保护 TVS - 二极管 描述：TVS DIODE 5.8VWM 13.4VC DO15

STMICROELECTRONICS

意法半导体

PEAK PULSE POWER 600 W (10/1000ms)

Description Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS technology and low voltage supplied IC’s. Features ● 600 W peak pulse power

文件：176.78 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

Voltage regulator dides

FEATURES ■ PEAK PULSE POWER : 400 W (10/1000µs) ■ STAND-OFF VOLTAGE RANGE : From 5.8V to 376 V ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR ■ FAST RESPONSE TIME ■ UL RECOGNIZED

文件：3.75324 Mbytes 页数：3 Pages

TAYCHIPST

泰迪斯电子

PEAK PULSE POWER 600 W (10/1000ms)

Description Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS technology and low voltage supplied IC’s. Features ● 600 W peak pulse power

文件：176.78 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体