TransZorb Transient Voltage Suppressors

文件：393.28 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Unidirectional and bidirectional Transient Voltage Suppressor Diodes

文件：114.61 Kbytes 页数：3 Pages

DIOTEC

德欧泰克

Unidirectional and bidirectional Transient Voltage Suppressor Diodes

文件：107.62 Kbytes 页数：3 Pages

DIOTEC

德欧泰克

TransZorb® Transient Voltage Suppressors

分立 Glass passivated chip junction\nAvailable in unidirectional and bidirectional\n400 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate         (duty cycle): 0.01 %;

Vishay

威世

Package：DO-204AC，DO-15，轴向；包装：散装 类别：电路保护 TVS - 二极管 描述：TVS DIODE 33.3VWM 53.9VC DO15

STMICROELECTRONICS

意法半导体

Package：DO-204AL，DO-41，轴向；包装：卷带（TR） 类别：电路保护 TVS - 二极管 描述：TVS DIODE 33.3VWM 53.9VC DO204AL

TSC

台湾半导体

TRANSZORB® Transient Voltage Suppressors

FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 400 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Sold

文件：105.84 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94 V-O • Glass passivated chip junction in DO-41 package • 400W surge capability at 1ms • Excellent clamping capability • Low zener impedance • Low incremental surge resistance • Excellent clamping capability

文件：74.81 Kbytes 页数：4 Pages

MDE

TRANSIENT VOLTAGE SUPPRESSOR

BREAKDOWN VOLTAGE: 5.8 --- 376 V PEAK PULSE POWER: 400 W FEATURES ♦ Plastic package has underwriters laboratory flammability classification 94V-0 ♦ Glass passivated junction ♦ 400W peak pulse power capability with a 10/1000μs waveform, repetition rate (duty cycle): 0.01 ♦ Excellent clamping c

文件：113.51 Kbytes 页数：4 Pages

BILIN

银河微电

TRANSIL

DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC’s. FEATURES ■ PEAK PULSE POWER : 400 W

文件：130.979 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体