RF AMPLIFIER MODEL

文件：80.87 Kbytes 页数：1 Pages

APITECH

3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching r

文件：59.48 Kbytes 页数：7 Pages

INTERSIL

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● 175oC Operating Temperature ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ● Low RDS(ON) : 0.912 Ω (Typ.)

文件：233.24 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Advanced Power MOSFET

文件：229.69 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体