BV1LD080EFJ-C中文资料罗姆数据手册PDF规格书

特性 Features

■ Built-in Dual TSD*1

■ AEC-Q100 Qualified*2

■ Built-in Over Current Protection Function(OCP)

■ Built-in Active Clamp Function

■ Direct Control Enabled from CMOS Logic IC, etc.

■ On Resistance RDS(ON) = 80 mΩ (Typ)

(when VIN = 5 V, IOUT = 1.5 A, Tj = 25 C)

■ Monolithic Power Management IC with the

Control Block (CMOS) and Power MOS FET

Mounted on a Single Chip

*1 This IC has thermal shutdown (Junction temperature detect)

and ΔTj Protection (Power-MOS steep temperature rising

detect).

*2 Grade1

Application

■ Driving Resistive, Inductive and Capacitive Load