| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
BUR52 | isc Silicon NPN Power Transistors DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) • High Current Capability • Low Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 25A APPLICATIONS • Designed for switching and linear applications in military and industrial equipment. 文件：186.16 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | |
BUR52 | HIGH CURRENT NPN SILICON TRANSISTOR DESCRIPTION The BUR52 is a silicon multiepitaxial planar NPN transistors in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment. ■ NPN TRANSISTOR ■ MAINTAINS GOOD SWITCHING PERFORMANCE EVEN WITHOUT NEGATIVE BASE DRIVE APPLI 文件：68.87 Kbytes 页数：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
BUR52 | HIGH CURRENT NPN SILICON TRANSISTORS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT The BUR52 is a silicon multiepitaxial planar NPN transistor in modified jedec TO-3 metal case, Intented for use in switching and linear applications in military and industrial equipment. Compliance to RoHS. 文件：121.38 Kbytes 页数：4 Pages | COMSET | COMSET | |
BUR52 | HIGH CURRENT NPN SILICON TRANSISTORS The BUR52 is a silicon multiepitaxial planar NPN transistor in modified jedec TO-3 metal case, Intented for use in switching and linear applications in military and industrial equipment. Compliance to RoHS. 文件：77.66 Kbytes 页数：3 Pages | COMSET | COMSET | |
BUR52 | HIGH CURRENT NPN SILICON TRANSISTOR DESCRIPTION The BUR52 is a silicon multiepitaxial planar NPN transistors in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment. ■ SGS-THOMSON PREFERRED SALESTYPE ■ NPN TRANSISTOR ■ MAINTAINS GOOD SWITCHING PERFORMANCE EVEN 文件：62.92 Kbytes 页数：4 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
BUR52 | HIGH CURRENT NPN SILICON 文件：27.62 Kbytes 页数：2 Pages | SEME-LAB | SEME-LAB | |
HIGH CURRENT NPN SILICON TRANSISTORS The BUR52 is a silicon multiepitaxial planar NPN transistor in modified jedec TO-3 metal case, Intented for use in switching and linear applications in military and industrial equipment. Compliance to RoHS. 文件：77.66 Kbytes 页数：3 Pages | COMSET | COMSET | ||
HIGH CURRENT NPN SILICON 文件：21.52 Kbytes 页数：2 Pages | SEME-LAB | SEME-LAB | ||
BUR52 | Bipolar Junction Transistors | TT Electronics | TT Electronics | |
Bipolar Junction Transistors | TT Electronics | TT Electronics |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
开关管 （S）_功率放大 （L）
- 封装形式：
直插封装
- 极限工作电压：
350V
- 最大电流允许值：
60A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
2
- 可代换的型号：
- 最大耗散功率：
350W
- 放大倍数：
- 图片代号：
E-44
- vtest：
350
- htest：
999900
- atest：
60
- wtest：
350
详细参数
- 型号：
BUR52
- 功能描述：
两极晶体管 - BJT DISC BY STM 08/01 TO-3 NPN PWR DARL
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
PNP 集电极—基极电压
- VCBO：
集电极—发射极最大电压
- VCEO：
- 40 V 发射极 - 基极电压
- VEBO：
- 6 V
- 增益带宽产品fT：
直流集电极/Base Gain hfe
- Min：
100 A
- 安装风格：
SMD/SMT
- 封装/箱体：
PowerFLAT 2 x 2
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
TO-3 |
10000 |
全新 |
询价 | |||
ST |
24+ |
TO-3 |
200 |
原装现货假一罚十 |
询价 | ||
SGS |
23+ |
2158 |
询价 | ||||
ST |
2013 |
CAN |
30 |
全新 |
询价 | ||
SEMELAB |
2447 |
TO-3 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST/ON |
23+ |
TO-3 |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
24+ |
N/A |
47000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
NS |
24+ |
TO-3 |
6000 |
只做原装正品现货 欢迎来电查询15919825718 |
询价 | ||
ST(意法) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 |
