isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 30V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

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N-channel TrenchMOS logic level FET

文件：784.97 Kbytes 页数：14 Pages

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N-channel TrenchMOS logic level FET

文件：233.32 Kbytes 页数：14 Pages

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PHI

丝印：BUK962R8-60E；Package：D2PAK；N-channel TrenchMOS logic level FET

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N-channel TrenchMOS logic level FET

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PHI

PHI

N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

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N-channel TrenchMOS logic level FET

Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. • AEC-Q101 compliant\n• Repetitive avalanche rated\n• Suitable for thermally demanding environments due to 175 °C rating\n• True logic level gate with VGS(th) rating of greater than 0.5V at 175 °C;

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