TrenchMOS logic level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rated ■ Logic level compatible. Applications ■ Automotive and general

文件：321.63 Kbytes 页数：15 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switch

文件：333.45 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET N-CH 100V 63A D2PAK

恩XP

恩智浦

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AE

文件：703.96 Kbytes 页数：12 Pages

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