isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

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ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 75A@ TC=25℃ · Drain Source Voltage -VDSS= 55V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.2mΩ(Max)@VGS= 10V DESCRIPTION · General purpose power switching · Automotive systems · Motors, lamps and solenoids

文件：372.38 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  L

文件：479.62 Kbytes 页数：15 Pages

NEXPERIA

安世

TrenchMOS logic level FET

文件：327.93 Kbytes 页数：15 Pages

PHI

飞利浦

N-channel TrenchMOS logic level FET

文件：379.67 Kbytes 页数：14 Pages

PHI

飞利浦

N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Nexperia

安世