isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switch

文件：332.67 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS logic level FET

文件：337.15 Kbytes 页数：14 Pages

NEXPERIA

安世

N-channel TrenchMOS logic level FET

文件：222.44 Kbytes 页数：13 Pages

PHI

PHI

N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Nexperia

安世