BUK7V4R2-40H数据手册Nexperia中文资料规格书

描述 Description

Dual, standard level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101.
An internal connection is made between the source (S1) of the high-side FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge switch in high-performance automotive PWM applications.

特性 Features

• LFPAK56D package with half-bridge configuration enables:
• Reduced PCB layout complexity
• PCB shrinkage through reduced component footprint for 3-phase motor drive
• Improved system level Rth(j-amb) due to optimized package design
• Lower parasitic inductance to support higher efficiency
• Footprint compatibility with LFPAK56D Dual package

• Advanced AEC-Q101 grade Trench 9 silicon technology:
• Low power losses, high power density
• Superior avalanche performance
• Repetitive avalanche rated

• LFPAK copper clip packaging provides high robustness and reliability
• Gull wing leads support high manufacturability and Automated Optical Inspection (AOI)

应用 Application

• 12 V automotive systems
• Powertrain, chassis, body and infotainment applications
• Brushless or brushed DC motor drive
• DC-to-DC systems
• LED lighting