BUK7K3R5-40N中文资料安世数据手册PDF规格书

1. General description

Automotive qualified dual N-channel standard level MOSFET using the latest Trench 15 low ohmic

enhanced-Trench Bottom Oxide (e-TBO) technology, providing high ruggedness at low RDSon,

housed in an LFPAK56D (Dual Power-SO8) package. This product has been fully designed and

qualified to meet AEC-Q101 requirements delivering high performance and endurance.

2. Features and benefits

• Dual MOSFET – two silicon dies in one LFPAK56D package for significant space saving

• Fully automotive qualified to AEC-Q101:

• 175 °C rating suitable for thermally demanding environments

• Trench 15 e-TBO technology:

• Merging benefits of Superjunction technology (high ruggedness) and Split-Gate technology

(low RDSon)

• Fast and efficient switching with high damping and low spiking

• Tight VGS(th) limits enable easy paralleling of MOSFETs

• LFPAK Gull Wing leads:

• High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike

traditional QFN packages

Visual (AOI) soldering inspection, no need for expensive x-ray equipment

• Easy solder wetting for good mechanical solder joint

• LFPAK copper clip technology:

• Improved reliability, with reduced Rth, RDSon, and package inductance

• Increases maximum current capability and improved current spreading

3. Applications

• 12 V automotive systems

• Motor, lighting, and solenoid control

• Transmission control

• Ultra high-performance power switching