TrenchMOS standard level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7504-40A in SOT78 (TO-220AB); BUK7604-40A in SOT404 (D2-PAK); BUK7E04-40A in SOT226 (I2-PAK). Feature

文件：152.88 Kbytes 页数：15 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 198A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：327.32 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

文件：800.49 Kbytes 页数：14 Pages

NEXPERIA

安世

N-channel TrenchMOS standard level FET

文件：211.55 Kbytes 页数：14 Pages

PHI

飞利浦

N-channel TrenchMOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Nexperia

安世