N-channel TrenchMOS standard level FET

General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive (GPA) TrenchMOS™ technology specifically optimized for linear operation. Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rated ■ Stable operat

文件：107.04 Kbytes 页数：14 Pages

PHI

PHI

N-channel TrenchMOS standard level FET

General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. Features and benefits ■

文件：218.37 Kbytes 页数：13 Pages

恩XP

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

文件：304.79 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS standard level FET

文件：199.95 Kbytes 页数：14 Pages

PHI

PHI

N-channel TrenchMOS standard level FET

文件：199.95 Kbytes 页数：14 Pages

PHI

PHI

60V N-Channel MOSFET

RM TECHNOLOGY

瑞美科