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BUK625R0-40C数据手册Nexperia中文资料规格书

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厂商型号

BUK625R0-40C

功能描述

BUK625R0-40C - N-channel TrenchMOS intermediate level FET

制造商

Nexperia Nexperia B.V. All rights reserved

中文名称

安世 安世半导体(中国)有限公司

数据手册

下载地址下载地址二

更新时间

2025-9-6 10:16:00

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BUK625R0-40C规格书详情

描述 Description

N-channel TrenchMOS intermediate level FET - Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.

特性 Features

·AEC Q101 compliant
·Suitable for standard and logic level gate drive sources
·Suitable for thermally demanding environments due to 175 °C rating

应用 Application

·12 V Automotive systems
·Electric and electro-hydraulic power steering
·Motors, lamps and solenoid control
·Start-Stop micro-hybrid applications
·Transmission control
·Ultra high performance power switching

技术参数

  • 制造商编号

    :BUK625R0-40C

  • 生产厂家

    :Nexperia

  • Package version

    :SOT428

  • Package name

    :DPAK

  • Product status

    :Production

  • Channel type

    :N

  • Number of transistors

    :1

  • V_DS [max] (V)

    :40

  • R_DSon [max] @ V_GS = 10 V (mΩ)

    :5

  • R_DSon [max] @ V_GS = 5 V (mΩ)

    :6.9

  • R_DSon [max] @ V_GS = 4.5 V (mΩ)

    :8.3

  • I_D [max] (A)

    :90

  • Q_GD [typ] (nC)

    :25.9

  • Q_G(tot) [typ] @ V_GS = 10 V (nC)

    :88

  • P_tot [max] (W)

    :158

  • Q_r [typ] (nC)

    :65

  • V_GSth [typ] (V)

    :2.3

  • Automotive qualified

    :Y

  • C_iss [typ] (pF)

    :3900

  • C_oss [typ] (pF)

    :512

  • Date

    :2010-10-11

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