SWITCHMODE NPN Silicon Planar Power Transistor

The BUH100G has an application specific state−of−art die designed for use in 100 Watts Halogen electronic transformers.

This power transistor is specifically designed to sustain the large inrush current during either the startup conditions or under a short circuit across the load.

Features

• Improved Efficiency Due to the Low Base Drive Requirements:

High and Flat DC Current Gain hFE

Fast Switching

• Robustness Thanks to the Technology Developed to Manufacture

this Device

• ON Semiconductor Six Sigma Philosophy Provides Tight and

Reproducible Parametric Distributions

• These Devices are Pb−Free and are RoHS Compliant*

BUH100G属于分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个。安森美半导体公司制造生产的BUH100G晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。