Enhanced PowerBridge Rectifiers

* Tested to UL standard for safety electrically isolated semiconductor devices. UL 1557 4th edition. Dielectric tested to maximum case, storage and junction temperature to 150 °C to withstand 1500 V. Epoxy meets UL 94 V-0 flammability rating. FEATURES • UL recognition file number E

文件：99.4 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Enhanced isoCink™ Bridge Rectifiers

* Tested to UL standard for safety electrically isolated semiconductor devices. UL 1557 4th edition.Dielectric tested to maximum case, storage and junction temperature to 150 °C to withstand 1500 V. Epoxy meets UL 94 V-0 flammability rating. FEATURES • UL recognition file number E309391 (

文件：107.97 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Enhanced isoCink??Bridge Rectifiers

FEATURES • UL recognition file number E312394 • Thin single in-line package • Glass passivated chip junction • Available for BU-5S lead forming option (part number with “5S” suffix, e.g. BU25065S) • Superior thermal conductivity • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material ca

文件：154.04 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Thin single in-line package

* Tested to UL standard for safety electrically isolated semiconductor devices. UL 1557 4th edition.Dielectric tested to maximum case, storage and junction temperature to 150 °C to withstand 1500 V. Epoxy meets UL 94 V-0 flammability rating. FEATURES • UL recognition file number E309391 (

文件：115.33 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of pc monitors.

文件：62.92 Kbytes 页数：6 Pages

PHI

PHI

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of PC monitors.

文件：98.67 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of PC monitors

文件：116.51 Kbytes 页数：3 Pages

SAVANTIC

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of pc monitors.

文件：65.099 Kbytes 页数：6 Pages

PHI

PHI

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) • High Switching Speed APPLICATIONS • Designed for use in horizontal deflection circuits of PC monitors.

文件：105.44 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of pc monitors.

文件：66.97 Kbytes 页数：7 Pages

PHI

PHI