TFZV36B

Marking：BU；Package：SOD-323HE；Zener Diode

TFZV36B

Marking：BU；Package：SOD-323HE；Zener Diode

TLV70512YFPR

Marking：BU；Package：DSBGA；200-mA, Low IQ, Low-Noise, Low-Dropout Regulator in Ultra-Small, 0.77-mm 횞 0.77-mm DSBGA and PicoStar

TLV70512YFPT

Marking：BU；Package：DSBGA；200-mA, Low IQ, Low-Noise, Low-Dropout Regulator in Ultra-Small, 0.77-mm 횞 0.77-mm DSBGA and PicoStar

BU406

Marking：BU406；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES HighVoltage FastSwitchingSpeed:tf=750ns(max) LowSaturationVoltage:VCE(sat)=1V(max)@5A Pb−FreePackagesareAvailable*

BU406-O-C-N-B

Marking：BU406；Package：TO-220C；HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES ●Highbreakdownvoltage ●Highcurrentcapability ●Highswitchingspeed ●Highreliability ●RoHSproduct APPLICATIONS ●Highfrequencyswitchingpower supply ●Highfrequencypowertransform ●Commonlypoweramplifier circuit

BUJ103A

Marking：BUJ103A；Package：TO-220AB；Silicon diffused power transistor

Generaldescription High-voltage,high-speedplanar-passivatedNPNpowerswitchingtransistorinaSOT78(TO-220AB)plasticpackage. Featuresandbenefits •Lowthermalresistance •Fastswitching Applications •Inverters •Motorcontrolsystems •Electroniclightingballasts •DC-to-DCc

BUJ303CD

Marking：BUJ303CD；Package：DPAK；NPN power transistor

Generaldescription HighvoltagehighspeedplanarpassivatedNPNpowerswitchingtransistorinaSOT428(DPAK)surfacemountableplasticpackage. Featuresandbenefits •Fastswitching •Lowthermalresistance •Surfacemountablepackage •TightDCgainspreads •Veryhighvoltagecapabili

BUK7214-75B

Marking：BUK7214-75B；Package：DPAK；N-channel TrenchMOS standard level FET

1.Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 2.Featuresandbenefits

BUK7277-55A

Marking：BUK7277-55A；Package：SOT428；N-channel TrenchMOS standard level FET

1.Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 2.Featuresandbenefits •