Smart Lowside Power Switch

General Description N channel vertical power FET in Smart SIPMOS chip on chip technology. Fully protected by embedded protected functions. Features • Logic Level Input • Input Protection (ESD) • Thermal Shutdown • Overload protection • Short circuit protection • Overvoltage protection •

文件：181.51 Kbytes 页数：11 Pages

INFINEON

英飞凌

Smart Lowside Power Switch

General Description\nN channel vertical power FET in Smart SIPMOS chip on chip technology. Fully protected by embedded protected functions. • Logic Level Input\n• Input Protection (ESD)\n• Thermal Shutdown\n• Overload protection\n• Short circuit protection\n• Overvoltage protection\n• Current limitation\n• Maximum current adjustable with external resistor\n• Current sense\n• Status feedback with external input resistor\n• Analog driving;

Infineon

英飞凌

MEDIUM-SWITCHING PLASTIC RECTIFIER

FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High surge current capability ♦ Construction utilizes void-free molded plastic technique ♦ High forward current operation ♦ Fast switching for high efficiency ♦ High temperature soldering guaranteed: 2

文件：44.69 Kbytes 页数：2 Pages

GE

Smart Lowside Power Switch

General Description N channel vertical power FET in Smart SIPMOS chip on chip technology. Fully protected by embedded protected functions. Features • Logic Level Input • Input Protection (ESD) • Thermal Shutdown • Overload protection • Short circuit protection • Overvoltage protection •

文件：193.18 Kbytes 页数：11 Pages

SIEMENS

西门子

High Speed, High CMR OPIC Photocoupler

■ Features 1. High speed response ( tPHL,tPLH : TYP. 0.3 µ s at RL = 1.9kΩ ) 2. High instantaneous common mode rejection voltage ( CMH : TYP. 1kV/ µ s ) 3. Standard dual-in-line package 4. Recognized by UL, file No. E64380 ■ Applications 1. Computers, measuring instruments, controllers 2. H

文件：59.57 Kbytes 页数：4 Pages

SHARPSharp Corporation

夏普