TRIACS

DESCRIPTION New range suited for applications such as phase control and static switching.

文件：189.16 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

8A TRIACs

8A TRIACs

文件：589.9 Kbytes 页数：5 Pages

JIEJIE

捷捷微电

8A SERIES TRIACS

Features ◇The LGE BTA08/BTB08, 8A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High bl

文件：3.51808 Mbytes 页数：6 Pages

LUGUANG

鲁光电子

Snubberless?? logic level and standard 8 A Triacs

文件：151.88 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

SENSITIVE GATE TRIACS

文件：817.41 Kbytes 页数：4 Pages

KERSEMI

Snubberless™, logic level and standard 8 A Triacs

Features • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM / VRRM 600 V to 800 V • Triggering gate current, IGT 5 to 50 mA Description Available either in through-hole and surface-mount packages, these devices are suitable for general purpose AC switching. They

文件：274.24 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

8A TRIACS

Description Available either in through-hole or surface-mount packages, the BTA08, BTB08, T810, T835 is suitable for general purpose AC switching. It can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits or for phase contr

文件：129.28 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

8A SERIES TRIACS

Features ◇The LGE BTA08/BTB08, 8A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High bl

文件：3.51808 Mbytes 页数：6 Pages

LUGUANG

鲁光电子

Triacs Silicon Bidirectional Thyristors

TRIACS 8 AMPERES RMS 600 thru 800 VOLTS Designed for high performance full‐wave ac control applications where high noise immunity and high commutating di/dt are required. Features •locking Voltage to 800 V •On‐State Current Rating of 8 Amperes RMS at 25°C •Uniform Gate Trigger

文件：90.63 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Snubberless™, logic level and standard 8 A Triacs

Features • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM / VRRM 600 V to 800 V • Triggering gate current, IGT 5 to 50 mA Description Available either in through-hole and surface-mount packages, these devices are suitable for general purpose AC switching. They

文件：274.24 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体