首页 >BT133>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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SmartLowsidePowerSwitch GeneralDescription NchannelverticalpowerFETinSmartSIPMOSchiponchiptechnology.Fullyprotectedbyembeddedprotectedfunctions. Features •LogicLevelInput •InputProtection(ESD) •=Thermalshutdownwithlatch •Overloadprotection •Shortcircuitprotection •Overvoltagepro | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SmartLowsidePowerSwitch(LogicLevelInputInputProtectionESDThermalShutdownOverloadprotection) GeneralDescription NchannelverticalpowerFETinSmartSIPMOSchiponchiptechnology.Fullyprotectedbyembeddedprotectedfunctions. Features •LogicLevelInput •InputProtection(ESD) •ThermalShutdown •Overloadprotection •Shortcircuitprotection •Overvoltageprotection • | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | SIEMENS | ||
SmartLowSidePowerSwitch GeneralDescription NchannelverticalpowerFETinSmartSIPMOS®chiponchiptechnology.Providingembeddedprotectionfunctions. Features •LogicLevelInput •InputProtection(ESD) •Thermalshutdownwithlatch •ShortcircuitandOverloadprotection •Overvoltageprotection •Current | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SiliconNPNPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
SiliconNPNPowerTransistors | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SiliconNPNPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
SiliconNPNPowerTransistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
iscSiliconNPNPowerTransistors DESCRIPTION •HighSwitchingSpeed •Collector-EmitterSustainingVoltage- :VCEO(SUS)=450V(Min)-BUS133 500V(Min)-BUS133A APPLICATIONS •Designedforuseinveryfastswitchingapplicationsin inductivecircuits. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscSiliconNPNPowerTransistors DESCRIPTION •HighSwitchingSpeed •Collector-EmitterSustainingVoltage- :VCEO(SUS)=450V(Min)-BUS133 500V(Min)-BUS133A APPLICATIONS •Designedforuseinveryfastswitchingapplicationsin inductivecircuits. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor DESCRIPTION •HighSwitchingSpeed •Collector-EmitterSustainingVoltage- :VCEO(SUS)=450V(Min) APPLICATIONS •Designedforuseinveryfastswitchingapplicationsin inductivecircuits. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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