| 订购数量 | 价格 | 
|---|---|
| 1+ | 
BSM200GA120DN2C_INFINEON/英飞凌_IGBT 模块 IGBT 1200V 200A赛美科科技
- 详细信息
 - 规格书下载
 
产品属性
- 类型
描述
 - 型号:
BSM200GA120DN2C
 - 功能描述:
IGBT 模块 IGBT 1200V 200A
 - RoHS:
否
 - 制造商:
Infineon Technologies
 - 产品:
IGBT Silicon Modules
 - 配置:
Dual 集电极—发射极最大电压
 - VCEO:
600 V
 - 集电极—射极饱和电压:
1.95 V 在25
 - C的连续集电极电流:
230 A
 - 栅极—射极漏泄电流:
400 nA
 - 功率耗散:
445 W
 - 最大工作温度:
+ 125 C
 - 封装/箱体:
34MM
 
供应商
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