订购数量 | 价格 |
---|---|
1+ |
BSM150GAR120DN2_INFINEON/英飞凌_IGBT 晶体管 1200V 150A DUAL浙江永芯
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
BSM150GAR120DN2
- 功能描述:
IGBT 晶体管 1200V 150A DUAL
- RoHS:
否
- 制造商:
Fairchild Semiconductor
- 配置:
集电极—发射极最大电压
- VCEO:
650 V
- 集电极—射极饱和电压:
2.3 V
- 栅极/发射极最大电压:
20 V 在25
- C的连续集电极电流:
150 A
- 栅极—射极漏泄电流:
400 nA
- 功率耗散:
187 W
- 封装/箱体:
TO-247
- 封装:
Tube
相近型号
- BSM150GB120DN1
- BSM150GAB120D
- BSM150GB120DN11
- BSM150GB120DN2
- BSM111AR
- BSM150GB120DN2B
- BSM111
- BSM10GP60
- BSM10GP120
- BSM150GB170DLC
- BSM10GD60DN2
- BSM150GB170DN2
- BSM150GB60DLC
- BSM10GD120DN2E3224
- BSM150GB60DLCIC
- BSM10GD120DN2E
- BSM150GD60DLC
- BSM10GD120DN2
- BSM150GT120DLC
- BSM10GD100DN1
- BSM150GT120DN2
- BSM10GD100D
- BSM150GT120DN2/DLC
- BSM10BT1
- BSM151
- BSM101AR
- BSM151A4R
- BSM100GT120DN2
- BSM151F
- BSM100GP60
- BSM15GD100D
- BSM15GD120D
- BSM100GD60DLC
- BSM15GD120D2
- BSM15GD120DLC
- BSM100GD120DN2
- BSM15GD120DLC_E3224
- BSM15GD120DLCE3224
- BSM100GD120DLC
- BSM15GD120DN1
- BSM100GB60DLC
- BSM15GD120DN12
- BSM100GB60DL
- BSM15GD120DN2
- BSM100GB170DN2
- BSM15GD120DN2E
- BSM100GB170DLC
- BSM15GD120DN2E3224
- BSM100GB12DN2
- BSM100GB123DN2