Schottky Barrier Diode

FEATURES * Halogen-free type * Compliance to RoHS product * Lead less chip form, no lead damage * Low power loss, High efficiency * High current capability, low VF * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 APPLICATION * Switching mode power supply a

文件：71.53 Kbytes 页数：2 Pages

ZOWIE

智威

Schottky Barrier Diode

FEATURES * Halogen-free type * Compliance to RoHS product * Lead less chip form, no lead damage * Low power loss, High efficiency * High current capability, low VF * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 APPLICATION * Switching mode power supply a

文件：314.62 Kbytes 页数：2 Pages

ZOWIE

智威

Schottky Barrier Diode

ZOWIE

智威

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUL series is d

文件：64.67 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The BUL310 and BUL310PI are manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUL

文件：88.94 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：207.32 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体