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BS616LV2016DCP55中文资料Very Low Power CMOS SRAM 128K X 16 bit数据手册Brilliance规格书

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厂商型号

BS616LV2016DCP55

功能描述

Very Low Power CMOS SRAM 128K X 16 bit

制造商

Brilliance Brilliance Auto

中文名称

华晨汽车 华晨汽车集团控股有限公司

数据手册

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更新时间

2025-9-19 13:26:00

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BS616LV2016DCP55规格书详情

描述 Description

DESCRIPTION
The  BS616L V2016  is  a  high  performance,  very  low  power  CMOS Static Random  Access Memory organized as 131,072 by 16 bits and operates form a wide range of 2.4V to 5.5V supply voltage. Advanced  CMOS  technology  and  circuit  techniques  provide  both high  speed  and  low  power  features  with  typical  CMOS  standby current of 0.1uA at 3.0V/25OC and maximum access time of 55ns at 3.0V/85OC.FEATURES
  WideVCC operation voltage : 2.4V ~ 5.5V
  Very low powerconsumption:
    VCC = 3.0V  Operationcurrent :  30mA (Max.)  at 55ns
                                               2mA (Max.)  at 1MHz
                     Standby current :  0.1uA (Typ.)  at 25OC
   VCC = 5.0V  Operationcurrent :  62mA (Max.)  at 55ns
                                             8mA (Max.)  at 1MHz
                    Standby current :  0.6uA (Typ.)  at 25OC
  Highspeed access time:
   -55  55ns(Max.) at VCC=3.0~5.5V
   -70  70ns(Max.) at VCC=2.7~5.5V
  Automatic power down whenchip is deselected
  Easy expansion with CE and OE options
  I/O Configuration x8/x16selectable by LB and UB pin.
  Threestate outputs and TTLcompatible
  Fully static operation
  Data retentionsupply voltage as low as 1.5V

特性 Features

  WideVCC operation voltage : 2.4V ~ 5.5V
  Very low powerconsumption:
    VCC = 3.0V  Operationcurrent :  30mA (Max.)  at 55ns
                                               2mA (Max.)  at 1MHz
                     Standby current :  0.1uA (Typ.)  at 25OC
   VCC = 5.0V  Operationcurrent :  62mA (Max.)  at 55ns
                                             8mA (Max.)  at 1MHz
                    Standby current :  0.6uA (Typ.)  at 25OC
  Highspeed access time:
   -55  55ns(Max.) at VCC=3.0~5.5V
   -70  70ns(Max.) at VCC=2.7~5.5V
  Automatic power down whenchip is deselected
  Easy expansion with CE and OE options
  I/O Configuration x8/x16selectable by LB and UB pin.
  Threestate outputs and TTLcompatible
  Fully static operation
  Data retentionsupply voltage as low as 1.5V 

技术参数

  • 型号:

    BS616LV2016DCP55

  • 制造商:

    BSI

  • 制造商全称:

    Brilliance Semiconductor

  • 功能描述:

    Very Low Power/Voltage CMOS SRAM 128K X 16 bit

供应商 型号 品牌 批号 封装 库存 备注 价格
BSI
24+
TSOP44
54000
郑重承诺只做原装进口现货
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BSI
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TSOP44
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
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BSI
25+
TSOP44
194
原装正品,假一罚十!
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BSI
22+
TSOP44
12245
现货,原厂原装假一罚十!
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BSI
24+
TSOP44
9600
原装现货,优势供应,支持实单!
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BSI
2025+
TSOP44
5378
全新原厂原装产品、公司现货销售
询价
BSI
23+
TSOP
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
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BSI
2447
TSOP44
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
BSI
23+
TSOP44
7300
专注配单,只做原装进口现货
询价
BSI
23+
SMD
50000
全新原装正品现货,支持订货
询价