Highlightsofourtunableprocessincludelowdarkcurrent,excellentCTE,andvery

goodyield

DALSASemiconductors150mmC252.5祄CCDprocessoffersburiedchannelorsurface

channeloperationatupto15voltswitheithertwoorthreepolysiliconlayers.A

modularprocessingapproachallowsourfoundrycustomerstoadjustprocessparameters

forthemostdemandingrequirementsonCTE,chargestoragecapacityandlowdark

current.Scannerphotolithographypermitsintegrationofwaferscaledevices.Weoffer

advancedtechnologysuchasstitchingforlargedevicesandmore.