BR93H56RF-2LB(H2)数据手册ROHM中文资料规格书

描述 Description

为支持现有客户而生产的产品。不对新设计出售此产品。

特性 Features

· Long time support a product for Industrial applications.
· Conforming to Microwire BUS
· Withstands electrostatic voltage 6kV (HBM method typ.)
· Wide temperature range -40℃ to +125℃ (-40℃ to +85℃, -40℃ to +105℃ in other series)
· Same package line up and same pin configuration
· 2.5V to 5.5V single supply voltage operation
· Address auto increment function at read operation
· Write mistake prevention function Write prohibition at power on Write prohibition by command code Write mistake prevention circuit at low voltage
· Program cycle auto erase and auto end function
· Program condition display by READY / BUSY
· Low current consumption At write operation (at 5V) : 0.8mA (Typ.) At read operation (at 5V) : 0.5mA (Typ.) At standby operation (at 5V) : 0.1µA (Typ.) (CMOS input)
· High reliability by ROHM original Double-Cell structure
· Data retention for 20 years(Ta=125℃)
· Endurance up to 300,000 cycles(Ta=125℃)
· Data at shipment all address FFFFh