N-CHANNEL MOSFET in a TO-220 Plastic Package

文件：1.40473 Mbytes 页数：8 Pages

FOSHAN

蓝箭电子

N-Channel MOSFET uses advanced trench technology

文件：1.68084 Mbytes 页数：5 Pages

DOINGTER

杜因特

MOSFET/场效应管

BlueRocket

蓝箭电子

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP80N06LT is sup

文件：72.66 Kbytes 页数：9 Pages

PHI

PHI

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP80N06LT is sup

文件：72.66 Kbytes 页数：9 Pages

PHI

PHI

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

文件：66.16 Kbytes 页数：8 Pages

PHI

PHI