丝印：500101；Package：VSON-CLIP；bq500101 NexFET™ Power Stage

1 Features 1• 98% System Efficiency at 5 A • Max Rated Continuous Current 10 A, Peak 15 A • High-Frequency Operation (up to 600 kHz) • High-Density SON 3.5 × 4.5 mm Footprint • Ultra-Low Inductance Package • System Optimized PCB Footprint • 3.3-V and 5-V PWM Signal Compatible • Input V

文件：431.83 Kbytes 页数：19 Pages

TI

德州仪器

bq500101 NexFET™ Power Stage

1 Features 1• 98% System Efficiency at 5 A • Max Rated Continuous Current 10 A, Peak 15 A • High-Frequency Operation (up to 600 kHz) • High-Density SON 3.5 × 4.5 mm Footprint • Ultra-Low Inductance Package • System Optimized PCB Footprint • 3.3-V and 5-V PWM Signal Compatible • Input V

文件：431.83 Kbytes 页数：19 Pages

TI

德州仪器

NexFET Power Stage

文件：376.22 Kbytes 页数：20 Pages

TI

德州仪器

bq500101 NexFET™ Power Stage

1 Features 1• 98% System Efficiency at 5 A • Max Rated Continuous Current 10 A, Peak 15 A • High-Frequency Operation (up to 600 kHz) • High-Density SON 3.5 × 4.5 mm Footprint • Ultra-Low Inductance Package • System Optimized PCB Footprint • 3.3-V and 5-V PWM Signal Compatible • Input V

文件：431.83 Kbytes 页数：19 Pages

TI

德州仪器